Performance Analysis of InAlN/GaN MOSHEMT for High Power RF Applications

Abstract

We presents DC and RF performance of 30 nm gate lengthAlN spacer basedInAlN/GaN based MOSHEMT with In GaN back barrier is investigated using Silvaco ATLAS TCAD tool. The proposed MOSHEMT featuring Al₂O₃ oxide layer, heavily doped n+ GaN Source/ drain region exhibits thesheet carrier density (n_s) of 1.66X10¹³ Cm^-2 , drain current density of 1.8 A/mm. drain current density, transconductance (g_m)of 530 mS/mm, low leakage current 10^-9 A/mm and current gain cut-off frequency (f_t) of .The excellent electrical characteristics of proposed MOSHEMTsareattractive candidates for future high power sub millimetre wave applications.