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Abstract
We explore buried gate mosfet and pn junction together with ultraviolent photodetector.And we have got some phenomenal results in this research.
We know ultraviolet detectors work began in the latter 19th century and it has ever increases to create some cutting edge technology. Spectrographs had to be carried and There was lot of atmospheric variations because of what research was not being able to be done. On the mountains there were very low wavelengths of energy and had to be done in the laboratory. Huffman has recently published books on ultraviolet region. In this paper we are going to present about UV detectors and its influence. Research lead to the creation og high quality GaN layers.